Chapter2 2 2. Contribution to the Calculation of Physical Properties of BeSe Semiconductor

Abstract We expose various physical parameters of binary compound BeSe in the stable zinc blend and NiAs structures using the functional HSE hybrid, GGA-PBE, and LDA. We deduce elastic constants, mechanical parameters, and wave velocities according to different orientations. BeSe semiconductor has Γ-X (2.852 eV) and Γ-K (0.536 eV) bandgap in zinc blend and NiAs structures. Electrons transit from Se-p site to the Be-s state and show covalent bonding. Optical absorption peaks result from electronic transitions under ultraviolet light irradiation.